Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN Layers and Nanowires | The Journal of Physical Chemistry C
ION CHANNELLING STUDIES OF DEFECT FORMATION IN GaN AND RELATED MATERIALS
Characterization of silicon dioxide film by high spatial resolution cathodoluminescence spectroscopy | Request PDF
Irradiation with phosphorus ions modifies the structure and tunable band-gap of a hexagonal AlN thin film | SpringerLink
a: The raw image of the first quantum well (QW) where a compositional... | Download Scientific Diagram
ACTIVITY REPORT 2017-2019
ION CHANNELLING STUDIES OF DEFECT FORMATION IN GaN AND RELATED MATERIALS
Przemyslaw JOZWIK | Assistant professor | PhD | National Centre for Nuclear Research, Otwock | Department of Material Physics | Research profile
Irradiation with phosphorus ions modifies the structure and tunable band-gap of a hexagonal AlN thin film | SpringerLink
Composition map of the quantum well (QW), the white line indicating the... | Download Scientific Diagram
Quantum Well Intermixing and Radiation Effects in InGaN/GaN Multi Quantum Wells
a-e: shows the composition maps of the quantum wells (QWs) 1-5,... | Download Scientific Diagram
Quantum Well Intermixing and Radiation Effects in InGaN/GaN Multi Quantum Wells
Irradiation with phosphorus ions modifies the structure and tunable band-gap of a hexagonal AlN thin film | SpringerLink
Mission statement
a-e: High-angle annular dark field-scanning transmission electron... | Download Scientific Diagram
Accelerator-based ion beam analysis—an overview and future prospects - ScienceDirect
Annual Report 2000
Shows a flow chart that summarizes the procedure presented in this work. | Download Scientific Diagram
Accelerator-based ion beam analysis—an overview and future prospects - ScienceDirect
PDF) Normal and reverse defect annealing in ion implanted II-VI oxide semiconductors
